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SI5402BDC
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
D TrenchFETr Power MOSFET ID (A)
6.7 6.1
rDS(on) (W)
0.035 @ VGS = 10 V 0.042 @ VGS = 4.5 V
1206-8 ChipFETr
1
D D D D S D D G
D
G Marking Code AD XXX Lot Traceability and Date Code Part # Code S N-Channel MOSFET
Bottom View
Ordering Information: SI5402BDC-T1--E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
30 "20 6.7 4.8 20 2.1 2.5 1.3
Steady State
Unit
V
4.9 3.5 A
1.1 1.3 0.7 -55 to 150 260 W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
45 80 18
Maximum
50 95 22
Unit
_C/W C/W
Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73051 S-41495--Rev. A, 09-Jun-04 www.vishay.com
1
SI5402BDC
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.9 A VGS = 4.5 V, ID = 4.4 A VDS = 10 V, ID = 4.9 A IS = 1.1 A, VGS = 0 V 20 0.029 0.035 19 0.8 1.2 0.035 0.042 1.0 3.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 4.9 A 10 1.9 1.6 14 10 10 27 10 20 15 15 40 15 60 ns W 20 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20
Transfer Characteristics
12
12
8
8 TC = 125_C 4 25_C -55_C 0 0.0
4 3V 0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 73051 S-41495--Rev. A, 09-Jun-04
2
SI5402BDC
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 r DS(on) - On-Resistance ( W ) 800 700 C - Capacitance (pF) 0.04 VGS = 4.5 V 0.03 VGS = 10 V Ciss 600 500 400 300 200 100 0.00 0 4 8 12 16 20 0 0 5 10 15 20 25 30 Coss
Vishay Siliconix
Capacitance
0.02
0.01
Crss
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.9 A 8 rDS(on) - On-Resiistance (Normalized) 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 4.9 A
6
1.2
4
1.0
2
0.8
0 0 2 4 6 8 10 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.08 0.10
On-Resistance vs. Gate-to-Source Voltage
0.06
ID = 4.9 A
0.04
TJ = 25_C
0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 73051 S-41495--Rev. A, 09-Jun-04
www.vishay.com
3
SI5402BDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 0.4 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 0 10-2 40 ID = 250 mA Power (W) 30 50
Single Pulse Power
20
10
-25
0
25
50
75
100
125
150
10-1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
100
Safe Operating Area
IDM Limited rDS(on) Limited
10 I D - Drain Current (A)
P(t) = 0.0001
1
ID(on) Limited TA = 25_C Single Pulse BVDSS Limited
P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc
0.1
0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80_C/W
t1 t2
Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
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Document Number: 73051 S-41495--Rev. A, 09-Jun-04
SI5402BDC
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
Document Number: 73051 S-41495--Rev. A, 09-Jun-04
www.vishay.com
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